unisonic technologies co., ltd BCP69 pnp epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2005 unisonic technologies co., ltd qw-r207-009,c pnp medium power transistor features * high current (max. 1 a) * low voltage (max. 20 v). * complementary to utc bcp68 applications * general purpose switch ing and amplification * power applications such as audio output stages. sot-223 1 *pb-free plating product number:BCP69l ordering information order number pin assignment normal lead free plating package 1 2 3 packing BCP69-xx-aa3-f-r BCP69l-xx-aa3-f-r sot-223 b c e tape reel BCP69l-xx-aa3-f-r (1)packing type (3)package type (4)rank (5)lead plating (2)pin assignment (1) r: tape reel (2) refer to pin assignment (3) aa3: sot-223 (4) xx: refer to classification of h fe (5) l: lead free plating, blank: pb/sn
BCP69 pnp epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r207-009,c absolute maximum rating (ta=25 c , unless otherwise specified) parameter symbol ratings unit collector-base voltage (open emitter) v cbo -32 v collector-emitter voltage (open base) v ceo -20 v emitter-base voltage (open collector) v ebo -5 v collector current (dc) i c -1 a peak collector current i cm -2 a peak base current i bm -200 ma total power dissipation, ta 25
p d 1.35 w junction temperature t j 150
operating ambient temperature t opr -45 ~ +150
storage temperature t stg -65 ~ +150
note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. thermal data parameter symbol ratings unit thermal resistance from junction to ambient (note 1) ja 91 k/w electrical characteristics (t j = 25
, unless otherwise specified.) parameter symbol test conditions min typ max unit collector-emitter saturation voltage v ce(sat) i c = -1a, i b = -100ma -500 mv i c = -5ma, v ce = -10v -620 mv base-emitter voltage v be i c = -1a, v ce = -1v -1 v i e = 0, v cb = -25v -100 na collector cut-off current i cbo i e = 0, v cb = -25v, t j = 150
-10 a emitter cut-off current i ebo i c = 0, v eb = -5v -100 na i c = -5ma, v ce = -10v 50 i c = -500ma, v ce = -1v 85 375 dc current gain h fe i c = -1a, v ce = -1v 60 collector capacitance c c i e = i e = 0, v cb = -5v, f = 1mhz 48 pf transition frequency f t i c = -10ma, v ce = -5v, f = 100mhz 40 mhz dc current gain ratio of the complementary pairs h fe1 h fe2 |i c | = 0.5a, |v ce | = 1v 1.6 classification of h fe rank 16 25 range 100~250 160~375
BCP69 pnp epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r207-009,c typical characteristics 0 400 300 h fe 200 100 -1 10 -1 -10 -10 2 -10 3 -10 4 i c (ma) v ce = -1v dc current gain (typical values) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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